3818009020
Gallium nitride, gallium oxide, gallium phosphide, gallium arsenide, indium gallium arsenide, gallium selenide, gallium antimonide, phosphogermanium zinc, germanium dioxide, germanium tetrachloride doped for use in the electronics industry
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4: Ingredients
5: Processing degree (whether separate conductive regions are formed)
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Gallium nitride, gallium oxide, gallium phosphide, gallium arsenide, indium gallium arsenide, gallium selenide, gallium antimonide, phosphogermanium zinc, germanium dioxide, germanium tetrachloride (hazardous chemicals, corrosive substances) doped for use in the electronics industry
Gallium nitride, gallium oxide, gallium phosphide, gallium arsenide, indium gallium arsenide, gallium selenide, gallium antimonide, phosphogermanium zinc, germanium dioxide, germanium tetrachloride (other hazardous chemicals) doped for use in the electronics industry
Gallium nitride, gallium oxide, gallium phosphide, gallium arsenide, indium gallium arsenide, gallium selenide, gallium antimonide, phosphogermanium zinc, germanium dioxide, germanium tetrachloride (other chemicals) doped for use in the electronics industry
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